Toshiba storage: storage-level memory is 10 times faster than TLC using SLC technology

Toshiba storage announced the launch of a new memory (SCM),  XL-FLASH  , and began to provide samples.This product USES 1-bit/unit SLC technology and 96-layer stacking technology to achieve high-speed reading and writing of 3D flash BiCSFLASH.Sample shipments of the 128Gbit chip will begin in September and mass production will begin in 2020.

XL-FLASH USES 16 physical plane structure, has excellent parallel processing ability, and compared with existing TLC (3-bit/unit) BiCSFLASH can achieve high-speed processing technology.It achieved read latency of 5 microns or less, increased speed by 10 times, and was positioned as a new memory hierarchy, bridging the performance gap between DRAM and NAND flash.

In addition, compared with traditional DRAM, the product can reduce the cost per bit and support large capacity non-volatile memory such as NAND flash.Toshiba storage will respond to the growing SCM market through  XL-FLASH  , including high-speed SSDS for data center and enterprise storage.