UnitedSiC introduces Kelvin contact silicon carbide mosfets

UnitedSiC has expanded its UF3C FAST series of silicon carbide mosfets to include parts with Kelvin contacts.

Available in 650V and 1.2kV versions, they come in a TO-247-4L package.

"The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large common source inductance of three-leaded packages," said the firm, which added that the packages operate up to 175°C.

Applications are foreseen in totem pole PFC stages, LLC and phase-shifted full bridge converters – within EV chargers, telecoms power and servers.

The devices within are cascode pairs – with gate-drive going to a low-voltage silicon mosfet, which controls a depletion-mode high-voltage silicon carbide fet.

"Compared with other wide band-gap technologies, the SiC cascode devices offer standard 12V gate drive, and have 100% production tested avalanche ratings," said UltraSiC.

The range includes:

UF3C120040K4S (1.2kV 40mΩ)

UF3C120080K4S (1.2kV 80mΩ)

UF3C065030K4S (650V 30mΩ)

UF3C065040K4S (650V 40mΩ)

UF3C065080K4S (650V 80mΩ)

Source from:electronicsweekly